Development of semiconductor sensors based on silicon carbide

Development of semiconductor sensors based on silicon carbide

(Own Funds)

Overall project:
Project leader: Lothar Frey
Project members: Christian Matthus
Start date: 1. October 2014
End date: 15. June 2018
Acronym:
Funding source:
URL:

Abstract

Abstract (fachliche Beschreibung), intern - Englsich

Publications

• Burenkov A., Matthus C., Erlbacher T.:
  Optimization of 4H-SiC UV Photodiode Performance Using Numerical Process and Device Simulation
  In: IEEE Sensors Journal 16 (2016), p. 4246-4252
  ISSN: 1530-437X
  DOI: 10.1109/JSEN.2016.2539598
• Matthus C., Erlbacher T., Burenkov A., Bauer A., Frey L.:
  Ion implanted 4H-SiC UV pin-diodes for solar radiation detection – Simulation and characterization
  In: Materials Science Forum 858 (2016), p. 1032-1035
  ISSN: 0255-5476
  DOI: 10.4028/www.scientific.net/MSF.858.1032
• Matthus C., Burenkov A., Erlbacher T.:
  Optimization of 4H-SiC photodiodes as selective UV sensors
  In: Materials Science Forum (2017), p. 622-625
  ISSN: 0255-5476
  DOI: 10.4028/www.scientific.net/MSF.897.622
• Matthus C., Erlbacher T., Schöfer B., Bauer A., Frey L.:
  Implementation of 4H-SiC PiN-diodes as nearly linear temperature sensors up to 800 K towards SiC multi-sensor integration
  In: Materials Science Forum (2017), p. 618-621
  ISSN: 0255-5476
  DOI: 10.4028/www.scientific.net/MSF.897.618